- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,731
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||||
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1,850
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless MV7 80V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 220 A | 6.1 mOhms | 2 V | 86 nC | Enhancement | PowerTrench | ||||
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947
In-stock
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Fairchild Semiconductor | MOSFET N-Channel PT 6V 8A 7mOhm | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.1 mOhms | Enhancement | PowerTrench | ||||||
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4,017
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 55A 31nC MOSFET | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 55 A | 6.1 mOhms | 2 V to 4 V | 31 nC | Enhancement |