- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
30 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,790
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | |||||
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3,157
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 66 A | 8 mOhms | Enhancement | PowerTrench | ||||||
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3,451
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 30V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 8 mOhms | Enhancement | PowerTrench | ||||||
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23,300
In-stock
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Fairchild Semiconductor | MOSFET 100/20V Nch Power Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 12.4 A | 8 mOhms | Enhancement | PowerTrench | ||||||
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9,108
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 53A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 8 mOhms | Enhancement | OptiMOS | ||||||
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1,174
In-stock
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Fairchild Semiconductor | MOSFET 30V Dual N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 13 A | 8 mOhms | 21 nC, 47 nC | PowerTrench SyncFET | ||||||
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3,441
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 14.9 A | 8 mOhms | - 102 nC | Enhancement | OptiMOS | |||||
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3,000
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 96A 10mOhm 120nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 100 V | 96 A | 8 mOhms | 120 nC | |||||||||
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980
In-stock
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STMicroelectronics | MOSFET N-Ch 55 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | |||||||
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829
In-stock
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STMicroelectronics | MOSFET N-Ch 55 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | |||||||
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GET PRICE |
15,810
In-stock
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IR / Infineon | MOSFET MOSFT 55V 110A 8mOhm 97.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 97.3 nC | ||||||||
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41,770
In-stock
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Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 5.8mOhms 15nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 8 mOhms | 1.35 V to 2.35 V | 15 nC | Enhancement | |||||
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1,771
In-stock
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IR / Infineon | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 58 A | 8 mOhms | 2.1 V | 40 nC | Enhancement | StrongIRFET | ||||
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1,202
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 46A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 46 A | 8 mOhms | 2.1 V | 15 nC | Enhancement | OptiMOS | ||||
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GET PRICE |
10,040
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 8 mOhms | Enhancement | OptiMOS | |||||
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1,873
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 50A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 50 A | 8 mOhms | Enhancement | OptiMOS | ||||||
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1,734
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vdss 1.5W | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10.3 A | 8 mOhms | 1.3 V | 25.1 nC | Enhancement | |||||
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3,120
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 30Vdss 20Vgss | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 8 mOhms | 2.5 V | 37 nC | Enhancement | |||||
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640
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 120 A | 8 mOhms | 2 V | 131 nC | Enhancement | |||||
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195
In-stock
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onsemi | MOSFET NFET SO8FL 30V 10.8A 7MO | 20 V | SMD/SMT | DFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 18.2 A | 8 mOhms | 2.2 V | 9.7 nC, 11.5 nC | ||||||
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755
In-stock
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STMicroelectronics | MOSFET N-Ch 55 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | |||||||
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1,580
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 75 V | - 100 A | 8 mOhms | 280 nC | |||||||
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964
In-stock
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STMicroelectronics | MOSFET N-Ch 100V 0.0068 Ohm typ. 80A STripFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 8 mOhms | 4.5 V | 61 nC | ||||||
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VIEW | Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 8 mOhms | 2 V to 4 V | 97.3 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC | 20 V | SMD/SMT | DirectFET-MP | Reel | 1 Channel | Si | N-Channel | 30 V | 56 A | 8 mOhms | 11 nC | |||||||||
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VIEW | onsemi | MOSFET NFET SO8FL 30V | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 53 A | 8 mOhms | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 8 mOhms | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 80A D2PAK-2 SIPMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 8 mOhms | Enhancement | SIPMOS | ||||||
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VIEW | onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 75 V | - 100 A | 8 mOhms | ||||||||
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2,335
In-stock
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IR / Infineon | MOSFET HEXFET 100V N CHANNEL | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 80 A | 8 mOhms | 3.6 V | 26 nC | Enhancement | StrongIRFET |