- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
12,317
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PwrTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 6.5 mOhms | Enhancement | PowerTrench | |||||
|
|
2,938
In-stock
|
Fairchild Semiconductor | MOSFET 60V N-Chnl Pwr Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 60 V | 13.5 A | 6.5 mOhms | 1.7 V | 45 nC | |||||||
|
|
950
In-stock
|
STMicroelectronics | MOSFET N-Ch 55 Volt 80 Amp | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 80 A | 6.5 mOhms | Enhancement | ||||||
|
|
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | ||||
|
|
1,397
In-stock
|
onsemi | MOSFET NFET SO8FL 100V 104A 7.7M | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 104 A | 6.5 mOhms | 2 V | 44 nC | Enhancement | ||||
|
|
1,909
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-CHANNEL POWER TRENCH | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 6.5 mOhms | 7.6 nC, 16 nC | Enhancement | |||||
|
|
1,492
In-stock
|
Infineon Technologies | MOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 110 A | 6.5 mOhms | 4 V | 76 nC | |||||
|
|
992
In-stock
|
STMicroelectronics | MOSFET N-CH 60V 80A STripFET VI DeepGATE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 6.5 mOhms | 4.5 V | 122 nC | |||||
|
|
801
In-stock
|
Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 6.5 mOhms | 4 V | 76 nC | Enhancement | ||||
|
|
GET PRICE |
19,630
In-stock
|
STMicroelectronics | MOSFET N-channel 80 V, 0.0058 Ohm typ., 110 A, STripFET F6 Powe... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 80 V | 80 A | 6.5 mOhms | 2.5 V to 4.5 V | 150 nC | Enhancement | |||
|
|
1,799
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 10.8A 7MO | 20 V | SMD/SMT | DFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 13.5 A | 6.5 mOhms | 19.1 nC, 42.7 nC | ||||||
|
|
963
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 6.5 mOhms | 1.2 V | 246 nC | Enhancement | OptiMOS | |||
|
|
410
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 80A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 80 A | 6.5 mOhms | Enhancement | OptiMOS | |||||
|
|
177
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 17 nC | Enhancement | ||||
|
|
4,775
In-stock
|
Toshiba | MOSFET Small Low ON Resistane MOSFETs | 20 V | SMD/SMT | UDFN6B-6 | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 6.5 mOhms | 1.1 V | 7.5 nC | Enhancement | |||||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 6mOhm 110A STripFET VII | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2 V to 4 V | 60 nC | |||||
|
|
VIEW | STMicroelectronics | MOSFET N-CH 100V 49mOhm 110A STripFET VII | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 110 A | 6.5 mOhms | 2.5 V | 72 nC | Enhancement | ||||
|
|
2,997
In-stock
|
Infineon Technologies | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 86 A | 6.5 mOhms | 2.25 V | 17 nC | Enhancement | ||||
|
|
VIEW | IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 6.5mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 44 A | 6.5 mOhms | Enhancement |
