- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Qg - Gate Charge :
- Tradename :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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10,643
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 22 nC | Enhancement | OptiMOS | |||
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GET PRICE |
390,400
In-stock
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onsemi | MOSFET -40V P-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 32 A | 27 mOhms | Enhancement | PowerTrench | ||||
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2,517
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 36 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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8,767
In-stock
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Diodes Incorporated | MOSFET MOSFET,N-CHANNEL 40V, 5.4A/- 7.1A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 40 V | 5.4 A | 27 mOhms | 6.3 nC | ||||||
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4,171
In-stock
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Fairchild Semiconductor | MOSFET 30V Single NCh Logic Level PowerTrench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.1 A | 27 mOhms | Enhancement | PowerTrench | |||||
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3,261
In-stock
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Fairchild Semiconductor | MOSFET Trans MOS P-Ch 40V 8.4A 3-Pin 2+Tab | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 32 A | 27 mOhms | Enhancement | PowerTrench | |||||
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4,691
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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2,807
In-stock
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onsemi | MOSFET 30V 20A N-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 27 mOhms | Enhancement | ||||||
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1,533
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 27mOhms 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 43.3 nC | Enhancement | |||||
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3,593
In-stock
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Infineon Technologies | MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 23 A | 27 mOhms | 2 V | 9.1 nC | Enhancement | OptiMOS | |||
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1,056
In-stock
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IR / Infineon | MOSFET MOSFT 55V 37A 27mOhm 43.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 37 A | 27 mOhms | 4 V | 65 nC | |||||
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445
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 27 mOhms | 3 V | 7.2 nC | Enhancement | ||||
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23,500
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement | ||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 27 mOhms | 1.2 V | 24 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 40V 7.5A Rdson=0.027Ohm | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 7.5 A | 27 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 200V 34A DPAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 34 A | 27 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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699
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 27 mOhms | 1.2 V | 24 nC | Enhancement | OptiMOS |
