- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9,795
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 1.2 A | 250 mOhms | Enhancement | ||||||
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9,423
In-stock
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Diodes Incorporated | MOSFET 100V N-Channel 2A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.9 A | 250 mOhms | Enhancement | ||||||
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4,492
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||
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1,145
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
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1,217
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 13A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 550 V | 13 A | 250 mOhms | Enhancement | CoolMOS | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 13.8 A | 250 mOhms | 2.5 V | 43 nC | Enhancement | CoolMOS | |||
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4,409
In-stock
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Fairchild Semiconductor | MOSFET NChannel Logic Level Enhancement Mode FET | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 1.1 A | 250 mOhms | Enhancement | ||||||
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697
In-stock
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Diodes Incorporated | MOSFET 100V 2.1A N-Channel Enhancement MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 2.1 A | 250 mOhms | Enhancement | ||||||
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216
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
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1,613
In-stock
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Diodes Incorporated | MOSFET 70V P-Ch Enh FET 160Vgs 10V 250mOhm | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 70 V | - 2.6 A | 250 mOhms | - 1 V | 18 nC | Enhancement | ||||
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229
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 250 mOhms | 1 V | 3.2 nC | Enhancement | ||||||
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683
In-stock
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onsemi | MOSFET PCH 1.8A 60V 4V DRIV | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.8 A | 250 mOhms | 4 V | 120 nC | Enhancement | ||||
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40,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.9 A | 250 mOhms | Enhancement | ||||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 700V 13.8A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.8 A | 250 mOhms | 2.5 V | 45 nC | Enhancement | CoolMOS | |||
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2,000
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 18.1 A | 250 mOhms | 2.5 V | 32.6 nC | Enhancement | CoolMOS | |||
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2,500
In-stock
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Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 18.1 A | 250 mOhms | 2.5 V | 32.6 nC | Enhancement |
