- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,413
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 65mOhms 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 42 nC | Enhancement | ||||
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3,275
In-stock
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STMicroelectronics | MOSFET N-Ch 100 Volt 15 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 23 A | 65 mOhms | Enhancement | ||||||
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2,780
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 50mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | Reel | 2 Channel | Si | N-Channel | 55 V | 5.1 A | 65 mOhms | 29 nC | Enhancement | ||||||
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2,695
In-stock
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IR / Infineon | MOSFET AUTO 55V 1 N-CH HEXFET 3.8mOhms | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | ||||||||
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5,591
In-stock
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Diodes Incorporated | MOSFET 30V N Chnl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.6 A | 65 mOhms | Enhancement | ||||||
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2,965
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V -28A 65mOhm 42nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | 42 nC | Enhancement | |||||
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6,775
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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2,380
In-stock
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Diodes Incorporated | MOSFET P-Channel 1.25W | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.8 A | 65 mOhms | - 2.1 V | 10.1 nC | Enhancement | ||||
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12,549
In-stock
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Diodes Incorporated | MOSFET P-Ch ENH FET -30V 65mOhm -10V -3.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 65 mOhms | - 1 V | 11 nC | Enhancement | ||||
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904
In-stock
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Diodes Incorporated | MOSFET 30V Enhancement Mode | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 5.4 A | 65 mOhms | Enhancement | ||||||
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126
In-stock
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Infineon Technologies | MOSFET 1 P-CH -30V HEXFET 37mOhms 6.9nC | 20 V | SMD/SMT | PQFN-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 13 A | 65 mOhms | 6.9 nC | ||||||||
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166
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 20A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 55 V | 20 A | 65 mOhms | 9.4 nC | OptiMOS | |||||
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3,013
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 31 A | 65 mOhms | - 4 V | 63 nC | |||||
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24,000
In-stock
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IR / Infineon | MOSFET MOSFT DUAL N/PCh 55V 4.7A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | N-Channel, P-Channel | 55 V | 4.7 A | 65 mOhms | 24 nC | ||||||||
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19,657
In-stock
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Fairchild Semiconductor | MOSFET P-Channel FET Enhancement Mode | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5 A | 65 mOhms | Enhancement | ||||||
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VIEW | Diodes Incorporated | MOSFET PMOS SINGLE P-CHANNL 30V 5.3A | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.3 A | 65 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET AUTO -55V 1 P-CH HEXFET 65mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 3.1 A | 65 mOhms | Enhancement |
