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- Package / Case :
- Qg - Gate Charge :
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6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,405
In-stock
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IR / Infineon | MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 7.1 mOhms | 46 nC | |||||||||
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GET PRICE |
7,088
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 7.1mOhms 9.6nC | 20 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 42 A | 7.1 mOhms | 9.6 nC | ||||||||
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1,428
In-stock
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Infineon Technologies | MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 79 A | 7.1 mOhms | 46 nC | |||||||||
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920
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 100A D2PAK-2 OptiMOS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 100 A | 7.1 mOhms | Enhancement | OptiMOS | ||||||
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4,800
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH 5.9mOhm DirectFET 1.8Vgs | 20 V | SMD/SMT | DirectFET-ST | Reel | 1 Channel | Si | N-Channel | 40 V | 12.7 A | 7.1 mOhms | 19 nC | Directfet | ||||||||
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38,000
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.1 mOhms | 2 V | 47 nC | Enhancement |