- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
29 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
8,613
In-stock
|
Fairchild Semiconductor | MOSFET 30V Single N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | MicroFET-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 10 mOhms | 2 V | 16 nC | PowerTrench | |||||||
|
20,000
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.6 A | 10 mOhms | Enhancement | PowerTrench | ||||||
|
8,295
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | ||||
|
7,878
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||||
|
5,139
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 71 A | 10 mOhms | 1.2 V | 68 nC | Enhancement | OptiMOS | ||||
|
4,058
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 90 A | 10 mOhms | 4 V | 44 nC | Enhancement | OptiMOS | ||||
|
3,967
In-stock
|
Diodes Incorporated | MOSFET N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 59 A | 10 mOhms | 1.4 V | 33.5 nC | Enhancement | |||||
|
4,604
In-stock
|
IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 43 A | 10 mOhms | 3.9 V | 22 nC | Enhancement | |||||
|
2,500
In-stock
|
Diodes Incorporated | MOSFET 60V 175c N-Ch FET 5.5mOhm 10Vgs 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 10 mOhms | 1 V | 47.1 nC | Enhancement | |||||
|
2,913
In-stock
|
Fairchild Semiconductor | MOSFET 30V NCH POWER TRENCH SYNCFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 10 A | 10 mOhms | Enhancement | PowerTrench SyncFET | ||||||
|
4,360
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3M | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 20 nC | Enhancement | OptiMOS | ||||
|
8,494
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 6 M Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | ||||||
|
3,485
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | Enhancement | OptiMOS | ||||||
|
4,594
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 39A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 39 A | 10 mOhms | 1 V | 15 nC | Enhancement | OptiMOS | ||||
|
2,838
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 30 A | 10 mOhms | Enhancement | OptiMOS | ||||||
|
5,460
In-stock
|
Fairchild Semiconductor | MOSFET 30V 22A 10mOhms N-Ch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 22 A | 10 mOhms | 2 V | 17 nC | ||||||
|
1,880
In-stock
|
Fairchild Semiconductor | MOSFET 30V Asymmetric Dual N-Channel Pwr Trench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 60 A | 10 mOhms | 2 V | 34 nC | Power Stage PowerTrench | |||||
|
364
In-stock
|
STMicroelectronics | MOSFET Automotive-grade N-channel 100 V, 0.0085 Ohm typ., 70 A STri... | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 2.5 V | 45 nC | Enhancement | |||||
|
2,060
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.6W 2075pF | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 43 A | 10 mOhms | 2.5 V | 16.1 nC | Enhancement | PowerDI | ||||
|
1,605
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 PowerDI3333-8,2K | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | 31.6 nC | Enhancement | ||||||
|
2,980
In-stock
|
Diodes Incorporated | MOSFET N-Ch MOSFET 30V 60A IDM 1.42W PD | 20 V | SMD/SMT | DFN3030-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.62 A | 10 mOhms | 1 V | 18.85 nC | Enhancement | |||||
|
1,844
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch ENH Mode PowerDI 12A - 9.5A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 9.5 A | 10 mOhms | Enhancement | |||||||
|
77
In-stock
|
Fairchild Semiconductor | MOSFET 35V N-Ch PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 59 A | 10 mOhms | Enhancement | PowerTrench | ||||||
|
VIEW | Toshiba | MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 35 A | 10 mOhms | 2 V to 4 V | 25 nC | Enhancement | |||||
|
4,999
In-stock
|
Infineon Technologies | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 71 A | 10 mOhms | 1.2 V | 68 nC | Enhancement | OptiMOS | ||||
|
3,000
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgs 0.5W 70A | 20 V | SMD/SMT | U-DFN2020-F-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 10 mOhms | 1 V | 14 nC | Enhancement | |||||
|
15,000
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 6 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 16.7 A | 10 mOhms | 1.7 V | 10.8 nC | ||||||
|
VIEW | Diodes Incorporated | MOSFET Dual N-Ch DIOFET VDSS 30V VGSS 12V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 7 A | 10 mOhms | 42 nC | |||||||
|
1,427
In-stock
|
STMicroelectronics | MOSFET N-Ch 100V 0.0085Ohm typ 70A STripFET VII | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 70 A | 10 mOhms | 4.5 V | 45 nC |