- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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447
In-stock
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Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 64 mOhms | Enhancement | PowerTrench | |||||
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2,495
In-stock
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Diodes Incorporated | MOSFET 1.4W 30V 5.8A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4.5 A | 64 mOhms | Enhancement | ||||||
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2,365
In-stock
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Diodes Incorporated | MOSFET 30V 4A N-CHANNEL | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | Enhancement | ||||||
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1,232
In-stock
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Toshiba | MOSFET 2N-Ch U-MOS VI FET ID 4A 30VDSS 4.5GD | 20 V | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 4 A | 64 mOhms | 1.3 V to 2.5 V | 2.5 nC | |||||
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9,519
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 18A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 18 A | 64 mOhms | Enhancement | OptiMOS | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 55V 19A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 15 A | 64 mOhms | Enhancement | OptiMOS |
