- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,493
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 17 A | 69 mOhms | 2 V | 25.2 nC | Enhancement | ||||
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9,564
In-stock
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Toshiba | MOSFET U-MOSVIII-H 60V 6A 9.3nC MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 6 A | 69 mOhms | 1.5 V | 9.3 nC | Enhancement | ||||
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191
In-stock
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STMicroelectronics | MOSFET Hi Vltg Pwr SCHOTTKY RECTIF | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 45 A | 69 mOhms | Enhancement |