- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,907
In-stock
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Fairchild Semiconductor | MOSFET SOT-223 N-CH ENHANCE | 20 V | SMD/SMT | SOT-223-4 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4 A | 100 mOhms | Enhancement | ||||||
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6,946
In-stock
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Fairchild Semiconductor | MOSFET SO-8 | 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 60 V | 3.5 A | 100 mOhms | Enhancement | PowerTrench | |||||
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3,178
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 100 mOhms | 37 nC | Enhancement | |||||
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5,098
In-stock
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Fairchild Semiconductor | MOSFET SC70-6 N-CH 30V | 20 V | SMD/SMT | SOT-323-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2 A | 100 mOhms | Enhancement | PowerTrench | |||||
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5,000
In-stock
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Fairchild Semiconductor | MOSFET TO-252 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 50 V | 14 A | 100 mOhms | Enhancement | ||||||
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6,382
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Ch QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 15.6 A | 100 mOhms | Enhancement | ||||||
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2,578
In-stock
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Diodes Incorporated | MOSFET 40V P-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 40 V | - 6.4 A | 100 mOhms | Enhancement | ||||||
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2,228
In-stock
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Fairchild Semiconductor | MOSFET 80V N-Channel QFET Logic Level | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 12.9 A | 100 mOhms | Enhancement | ||||||
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3,158
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 11.5 A | 100 mOhms | Enhancement | PowerTrench SyncFET | |||||
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4,174
In-stock
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IR / Infineon | MOSFET MOSFT DUAL PCh -30V 3.6A | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 3.6 A | 100 mOhms | 16.7 nC | ||||||||
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4,315
In-stock
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STMicroelectronics | MOSFET N-Ch 60 Volt 12 Amp | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 12 A | 100 mOhms | Enhancement | ||||||
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1,494
In-stock
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Diodes Incorporated | MOSFET MOSFET N-CH 100V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7.7 A | 100 mOhms | Enhancement | ||||||
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2,998
In-stock
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onsemi | MOSFET 30V 5.2A P-Channel | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 5.2 A | 100 mOhms | Enhancement | ||||||
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652
In-stock
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Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.3 A | 100 mOhms | 1.7 V | 4.1 nC | PowerTrench | ||||
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92,400
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | P-Channel | - 55 V | - 19 A | 100 mOhms | 23.3 nC | ||||||||
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1,212
In-stock
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onsemi | MOSFET 30V 3.5A P-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 100 mOhms | Enhancement | ||||||
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638
In-stock
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IR / Infineon | MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 19 A | 100 mOhms | 23.3 nC | Enhancement | |||||
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552
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 21A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 21 A | 100 mOhms | 2.1 V | - | Enhancement | OptiMOS | |||
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VIEW | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100mOhm 3V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 18 A | 100 mOhms | 1 V | 25.2 nC | Enhancement | ||||
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28
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 900 V | 36 A | 100 mOhms | 3 V | 252 nC | Enhancement | |||||
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27,063
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 3 V | 28 nC | Enhancement | STripFET | |||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 21A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 21 A | 100 mOhms | 2.1 V | - | Enhancement | OptiMOS |
