- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
7,173
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.7 A | 88 mOhms | Enhancement | PowerTrench | |||||
|
|
4,593
In-stock
|
Fairchild Semiconductor | MOSFET 100/20V Single N-Channel Power Trench Mosfet | 20 V | SMD/SMT | MicroFET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 3.3 A | 88 mOhms | 2 V | 5.2 nC | Enhancement | PowerTrench | |||
|
|
1,785
In-stock
|
onsemi | MOSFET NFET 60V 3A 0.100R | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3 A | 88 mOhms | 10.6 nC | ||||||
|
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21 A | 88 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
|
|
VIEW | Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 21 A | 88 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
|
|
VIEW | Toshiba | MOSFET Vds=30V Id=2.4A 3Pin | 20 V | SMD/SMT | UFM-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 2.4 A | 88 mOhms | Enhancement |