- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,234
In-stock
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Fairchild Semiconductor | MOSFET SO-8 N-CH 200V | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3 A | 130 mOhms | Enhancement | PowerTrench | ||||||
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2,138
In-stock
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Fairchild Semiconductor | MOSFET N-CH 200V 18A Q-FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 3.6 A | 130 mOhms | Enhancement | PowerTrench | ||||||
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738
In-stock
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Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS | ||||
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49,860
In-stock
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onsemi | MOSFET 30V P-Ch PowerTrench | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.4 A | 130 mOhms | Enhancement | PowerTrench | ||||||
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2,943
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | ||||||
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2,346
In-stock
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Diodes Incorporated | MOSFET 70V N-Channel 6.1A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 6.1 A | 130 mOhms | Enhancement | |||||||
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2,825
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.13 Ohm 3A STripFET VI | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | 2 V | 6.4 nC | Enhancement | STripFET | ||||
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1,513
In-stock
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Diodes Incorporated | MOSFET 70V N-Channel 3.8A MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 70 V | 3.8 A | 130 mOhms | Enhancement | |||||||
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7,125
In-stock
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onsemi | MOSFET -60V -15.5A P-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 15.5 A | 130 mOhms | Enhancement | |||||||
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9,000
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | - 3 V | 17.7 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 550V 23A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 23 A | 130 mOhms | 2.5 V | 64 nC | Enhancement | CoolMOS |