- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,280
In-stock
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Fairchild Semiconductor | MOSFET 150 N-CH PwrTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 5 A | 41 mOhms | 3.1 V | 11.3 nC | PowerTrench | ||||||
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23,701
In-stock
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Infineon Technologies | MOSFET MOSFT 25V 5.8A 24mOhm 5.4 Qg | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | N-Channel | 25 V | 5.8 A | 41 mOhms | 5.4 nC | ||||||||
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21,735
In-stock
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Infineon Technologies | MOSFET N-Ch 20V 2.3A SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 2.3 A | 41 mOhms | 550 mV | 1.7 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25mOhm -16.1A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16.1 A | 41 mOhms | - 3 V | 16.5 nC | Enhancement |
