- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,876
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 67 A | 9.3 mOhms | 2 V | 65 nC | Enhancement | ||||
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973
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 103 A | 9.3 mOhms | 2 V | 150 nC | Enhancement | ||||
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1,978
In-stock
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Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | BGA-10 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 14 A | 9.3 mOhms | 1.3 V | 15 nC | NexFET | ||||
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2,021
In-stock
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Texas instruments | MOSFET 30V N-Chan NexFET? Power MOSFET 8-VSONP | 20 V | SMD/SMT | VSONP-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 9.3 mOhms | |||||||||
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2,000
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 45 A | 9.3 mOhms | 1 V | 55.4 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET 30V 1 N-CH HEXFET DIRECTFET SQ | 20 V | SMD/SMT | DirectFET-SQ | Reel | 1 Channel | Si | N-Channel | 30 V | 12 A | 9.3 mOhms | 11.7 nC |
