- Manufacture :
- Package / Case :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,603
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | CoolMOS | ||||||
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4,720
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | ||||
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2,186
In-stock
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Infineon Technologies | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 11.3 A | 108 mOhms | 2 V | 8.7 nC | Enhancement | OptiMOS | |||
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4,566
In-stock
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onsemi | MOSFET SWITCHING DEVICE | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 35 V | 3 A | 108 mOhms | |||||||
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2,955
In-stock
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Toshiba | MOSFET Small-signal MOSFET 2 in 1 Nch ID: 4A | SMD/SMT | uDFN-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 4 A | 108 mOhms | 400 mV | 3.6 nC | Enhancement |
