- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,990
In-stock
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Nexperia | MOSFET 80 V, N-channel Trench MOSFET | 20 V | SMD/SMT | DFN1010D-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 80 V | 1.1 A | 345 mOhms | 1.7 V | 3 nC | Enhancement | ||||
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6,101
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement | |||
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12,378
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement | |||
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3,635
In-stock
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Infineon Technologies | MOSFET N-Ch 55V 540mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 55 V | 540 mA | 345 mOhms | 1.2 V | 2.26 nC | Enhancement |
