- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Tradename :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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12,393
In-stock
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Fairchild Semiconductor | MOSFET P-Ch LL FET Enhancement Mode | 20 V | SMD/SMT | SSOT-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 900 mA | 500 mOhms | Enhancement | ||||||
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3,290
In-stock
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Fairchild Semiconductor | MOSFET Dual N-Ch 100V Spec Power Trench | 20 V | SMD/SMT | SSOT-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 100 V | 1 A | 500 mOhms | Enhancement | PowerTrench | |||||
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60,000
In-stock
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Toshiba | MOSFET Small-signal MOSFET ID 0.4A, VDSS 30V | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 400 mA | 500 mOhms | 1.1 V | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 500V 7.6A DPAK-2 CoolMOS CE | 20 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 7.6 A | 500 mOhms | 18.7 nC | CoolMOS |
