- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
48,946
In-stock
|
Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 mA | 2.8 Ohms | 600 mV | 490 pC | Enhancement | ||||
|
7,467
In-stock
|
Nexperia | MOSFET N-CH DMOS 240V 375MA | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 375 mA | 2.8 Ohms | Enhancement | ||||||
|
8,206
In-stock
|
Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 375 mA | 2.8 Ohms | Enhancement | ||||||
|
36,021
In-stock
|
Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 350 mA | 2.8 Ohms | 0.2 nC | Enhancement | |||||
|
6,479
In-stock
|
Nexperia | MOSFET Single N-Channel 60V 300mA | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2.8 Ohms | 0.5 nC | ||||||
|
8,622
In-stock
|
Diodes Incorporated | MOSFET 30V DUAL N-CH MOSFET | 20 V | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 260 mA | 2.8 Ohms | 1.5 V | 0.87 nC | Enhancement | ||||
|
10,254
In-stock
|
Nexperia | MOSFET TAPE7 MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 300 mA | 2.8 Ohms | Enhancement | ||||||
|
46,798
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
|
1,862
In-stock
|
onsemi | MOSFET NCH 200V 0.5A 4V DRIVE | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 500 mA | 2.8 Ohms | 1.2 V | 2.4 nC | Enhancement | ||||
|
5,698
In-stock
|
Diodes Incorporated | MOSFET 30V N-Ch Enh FET 20Vgss 300mA 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 380 mA | 2.8 Ohms | 800 mV | 900 pC | Enhancement | ||||
|
10,000
In-stock
|
Toshiba | MOSFET Small-signal MOSFET VDSS=60V, ID=0.15A | 20 V | SMD/SMT | CST3C-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 150 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement | |||||
|
6,000
In-stock
|
Toshiba | MOSFET Small-signal Nch MOSFET ID: 0.15A | 20 V | SMD/SMT | SOT-416-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 170 mA | 2.8 Ohms | 1.1 V | 350 pC | Enhancement | |||||
|
VIEW | Nexperia | MOSFET N-channel TrenchMOS intermed level FET | 20 V | SMD/SMT | SOT-23-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 75 V | 300 mA | 2.8 Ohms | 2 V | Enhancement |