- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,557
In-stock
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IR / Infineon | MOSFET 40V 85A 2.4mOhm 92nC STrongIRFET | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 159 A | 2.7 mOhms | 3.9 V | 92 nC | Enhancement | StrongIRFET | |||
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2,491
In-stock
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Infineon Technologies | MOSFET Automotive HEXFET COOLiRFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.3 mOhms | 3.9 V | 65 nC | Enhancement | ||||
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4,604
In-stock
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IR / Infineon | MOSFET 40V Dual N Channel HEXFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 43 A | 10 mOhms | 3.9 V | 22 nC | Enhancement | ||||
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1,160
In-stock
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Infineon Technologies | MOSFET MOSFET N-CH 40V 100A PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 265 A | 950 uOhms | 3.9 V | 127 nC | Enhancement | StrongIRFET | |||
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800
In-stock
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Infineon Technologies | MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 426 A | 1.2 mOhms | 3.9 V | 300 nC | StrongIRFET |
