- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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48,946
In-stock
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Nexperia | MOSFET 60V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 265 mA | 2.8 Ohms | 600 mV | 490 pC | Enhancement | |||
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19,651
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | |||
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16,218
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 230mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 230 mA | 2.2 Ohms | 600 mV | 1.4 nC | Enhancement | |||
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1,658
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement | |||
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2,644
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 350mA SOT-223-3 | 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 350 mA | 4 Ohms | 600 mV | 6.8 nC | Enhancement |
