- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,352
In-stock
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IR / Infineon | MOSFET AUTO -30V DUAL P-CH HEXFET 0.042 RDSon | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 4.9 A | 58 mOhms | - 3 V | 23 nC | Enhancement | ||||
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2,943
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -4.6A 70mOhm 27nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.6 A | 130 mOhms | - 3 V | 27 nC | |||||
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4,369
In-stock
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Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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1,048
In-stock
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Diodes Incorporated | MOSFET FET BVDSS 41V 60V P-Ch 6.1A 250Vgs | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 1.9 A | 300 mOhms | - 3 V | 9.7 nC | Enhancement | ||||
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9,000
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch Enh Mode 1.1W 3A 637pF 17.7nC | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | - 3 V | 17.7 nC | Enhancement | ||||
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4,000
In-stock
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IR / Infineon | MOSFET AUTO -55V 1 N-CH HEXFET 105mOhms | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 55 V | - 3.4 A | 105 mOhms | - 3 V | 26 nC | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.5 A | 98 mOhms | - 3 V | 9.5 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh FET 25mOhm -16.1A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 16.1 A | 41 mOhms | - 3 V | 16.5 nC | Enhancement |