- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
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- 1 MOhms (1)
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- 15.5 mOhms (1)
- 15.9 mOhms (1)
- 18 mOhms (1)
- 2 Ohms (1)
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- 24 mOhms (1)
- 29 mOhms (1)
- 3 Ohms (1)
- 3.2 mOhms (2)
- 3.4 mOhms (2)
- 4.4 mOhms (1)
- 4.5 mOhms (2)
- 42 mOhms (1)
- 5.6 mOhms (2)
- 6.5 mOhms (1)
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- 750 mOhms (1)
- 8.9 mOhms (1)
- 970 uOhms (1)
- Qg - Gate Charge :
-
- 0.3 nC (1)
- 0.87 nC (1)
- 11 nC (1)
- 15 nC, 47 nC (1)
- 15 nC, 66 nC (1)
- 15.3 nC (1)
- 15.7 nC (1)
- 155 nC (1)
- 16 nC (1)
- 17 nC (2)
- 2.2 nC (1)
- 2.4 nC (1)
- 2.8 nC (2)
- 20 nC (1)
- 3.6 nC (1)
- 30.5 nC (1)
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- 33 nC (1)
- 37 nC (1)
- 47 nC (1)
- 55 nC (1)
- 6 nC (1)
- 60 nC (1)
- 77 nC (1)
- 8 nC (2)
- 8.1 nC (1)
- 8.7 nC (2)
- 85 nC (2)
- 94 nC (1)
34 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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112,307
In-stock
|
Diodes Incorporated | MOSFET N-Channel | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 3 Ohms | 1.6 V | 0.3 nC | Enhancement | |||||
|
4,203
In-stock
|
Fairchild Semiconductor | MOSFET 100V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 7 A | 24 mOhms | 1.6 V | 15.3 nC | PowerTrench | |||||
|
1,697
In-stock
|
Infineon Technologies | MOSFET 25V Dual N-Ch 1.45mOhm 31nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 47 nC | Enhancement | FastIRFet | ||||
|
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | |||||
|
992
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 18 mOhms | 1.6 V | 60 nC | Enhancement | |||||
|
1,946
In-stock
|
IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 44 A | 1.1 mOhms | 1.6 V | 77 nC | ||||||
|
3,366
In-stock
|
Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.3 A | 750 mOhms | 1.6 V | 8.1 nC | Enhancement | |||||
|
4,970
In-stock
|
onsemi | MOSFET NFET U8FL 30V 41A 8MOHM | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 37 A | 8.9 mOhms | 1.6 V | 16 nC | ||||||
|
115
In-stock
|
Infineon Technologies | MOSFET LV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 40 A | 4.4 mOhms | 1.6 V | 11 nC | Enhancement | ||||||
|
4,844
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 9 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 13.5 mOhms | 1.6 V | 8 nC | ||||||
|
4,305
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 7 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 7 mOhms | 1.6 V | 8.7 nC | ||||||
|
2,618
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 540 mA | 2 Ohms | 1.6 V | 0.87 nC | Enhancement | |||||
|
115
In-stock
|
IR / Infineon | MOSFET 25V Dual N-Ch 1.10mOhm 44nC 45A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 64 A | 3.2 mOhms | 1.6 V | 15 nC, 66 nC | Enhancement | FastIRFet | ||||
|
1,220
In-stock
|
onsemi | MOSFET NFET SO8FL 30V 65A 5MOHM | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 65 A | 3.4 mOhms | 1.6 V | 30.5 nC | ||||||
|
337
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 13 mOhms | 1.6 V | 85 nC | Enhancement | |||||
|
2,438
In-stock
|
Fairchild Semiconductor | MOSFET Computing MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 76 A | 4.5 mOhms | 1.6 V | 37 nC | ||||||
|
GET PRICE |
46,170
In-stock
|
Texas instruments | MOSFET 30V N-Chnl MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 11.8 mOhms | 1.6 V | 6 nC | NexFET | ||||
|
3,164
In-stock
|
Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | |||||
|
2,476
In-stock
|
Texas instruments | MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 11.8 mOhms | 1.6 V | 2.8 nC | NexFET | |||||
|
3,000
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench | 20 V | SMD/SMT | Power-56-8 | Reel | 1 Channel | Si | N-Channel | 25 V | 32 A | 1 MOhms | 1.6 V | 85 nC | PowerTrench SyncFET | |||||||
|
3,000
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Chan SyncFET PowerTrench | 20 V | SMD/SMT | Power-33-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 2.5 mOhms | 1.6 V | 47 nC | SyncFET | |||||||
|
4,973
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 15.9 mOhms | 1.6 V | 33 nC | Enhancement | |||||
|
8,972
In-stock
|
onsemi | MOSFET TRENCH 3.1 30V 9 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 38 A | 13.5 mOhms | 1.6 V | 8 nC | ||||||
|
5,000
In-stock
|
Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 12.4 mOhms | 1.6 V | 3.6 nC | NexFET | |||||
|
GET PRICE |
59,200
In-stock
|
Texas instruments | MOSFET 30V N-CH Pwr MOSFETs | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 29 mOhms | 1.6 V | 2.4 nC | NexFET | ||||
|
GET PRICE |
29,980
In-stock
|
Texas instruments | MOSFET 30V Dual N-Ch Common Drain NexFET | 20 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 5.0 A | 42 mOhms | 1.6 V | 2.2 nC | Enhancement | NexFET | |||
|
15,000
In-stock
|
onsemi | MOSFET 30V 75A 4.5 mOhm Single N-Chan u8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 75 A | 4.5 mOhms | 1.6 V | 15.7 nC | ||||||
|
VIEW | onsemi | MOSFET TRENCH 3.1 30V 7 Ohm NCH | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 44 A | 12 mOhms | 1.6 V | 8.7 nC | ||||||
|
1,805
In-stock
|
IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 49 A | 970 uOhms | 1.6 V | 94 nC | FastIRFet | |||||
|
4,494
In-stock
|
Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 20 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet |