- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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3,439
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC Qg | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 8.1 nC | |||||||
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3,366
In-stock
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Diodes Incorporated | MOSFET ENHANCE MODE MOSFET 200V N-CHANNEL | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.3 A | 750 mOhms | 1.6 V | 8.1 nC | Enhancement | |||
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3,168
In-stock
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IR / Infineon | MOSFET MOSFT 30V 14A 8.7mOhm 8.1nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 13 mOhms | 8.1 nC | |||||||
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2,154
In-stock
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Diodes Incorporated | MOSFET 60V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 14 A | 140 mOhms | -2.7 V | 8.1 nC | Enhancement | |||
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VIEW | IR / Infineon | MOSFET 25V 1 N-CH HEXFET 7.8mOhms 8.1nC | 20 V | SMD/SMT | DirectFET-S1 | Reel | 1 Channel | Si | N-Channel | 25 V | 39 A | 10.1 mOhms | 8.1 nC |
