- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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27,186
In-stock
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Nexperia | MOSFET 30V N-channel Trench MOSFET | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.6 A | 34 mOhms | 1 V | 7.2 nC | Enhancement | ||||
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6,085
In-stock
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IR / Infineon | MOSFET MOSFT 30V 11A 13.8mOhm 7.2nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 11 A | 18.2 mOhms | 7.2 nC | ||||||||
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5,279
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 400 mOhms | 7.2 nC | ||||||||
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2,026
In-stock
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Texas instruments | MOSFET 60-V Dual N-Channel Power MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 23 mOhms | 3 V | 7.2 nC | NexFET | ||||
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445
In-stock
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Texas instruments | MOSFET 60V Dual NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 60 V | 15 A | 27 mOhms | 3 V | 7.2 nC | Enhancement |
