- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Applied Filters :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,743
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.5 A | 900 mOhms | 3.5 V | 13 nC | SuperFET II | |||||
|
2,337
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 4.3 mOhms | 1.5 V | 13 nC | PowerTrench SyncFET | |||||
|
7,033
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 63A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 63 A | 4.5 mOhms | 13 nC | OptiMOS | ||||||
|
12,597
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 5.4 mOhms | 1.2 V | 13 nC | Enhancement | OptiMOS | ||||
|
1,980
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.4A D2PAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 950 mOhms | 13 nC | CoolMOS | ||||||
|
2,762
In-stock
|
onsemi | MOSFET PCH+NCH 4V DRIVE SERIES | 20 V | SMD/SMT | ECH-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | P-Channel | - 30 V | - 5.5 A | 58 mOhms | 13 nC | |||||||
|
GET PRICE |
4,820
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | |||
|
1,989
In-stock
|
onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 6 A | 43 mOhms | 13 nC | |||||||
|
1,262
In-stock
|
Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 47 mOhms | 1.2 V | 13 nC | Enhancement | |||||
|
3,548
In-stock
|
Infineon Technologies | MOSFET CONSUMER | 20 V | SMD/SMT | SOT-223-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.8 A | 2.34 Ohms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||||
|
2,900
In-stock
|
Diodes Incorporated | MOSFET NMOS-SINGLE | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.9 A | 25 mOhms | 2.1 V | 13 nC | Enhancement | |||||
|
120,000
In-stock
|
IR / Infineon | MOSFET Dual MOSFT PCh -8.0A 21.0mOhm -4.5V capbl | 20 V | SMD/SMT | SO-8 | Reel | 2 Channel | Si | P-Channel | - 30 V | - 8 A | 17 mOhms | 13 nC | |||||||||
|
VIEW | Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 5.4 mOhms | 1.2 V | 13 nC | Enhancement | OptiMOS | ||||
|
3,645
In-stock
|
IR / Infineon | MOSFET HEXFET 100V N CHANNEL | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 35 A | 16.4 mOhms | 3.6 V | 13 nC | Enhancement | StrongIRFET | ||||
|
1,503
In-stock
|
IR / Infineon | MOSFET TRENCH_MOSFETS | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 34 A | 16.4 mOhms | 2 V | 13 nC | Enhancement | |||||
|
2,319
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 4.3A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.3 A | 1 Ohms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||||
|
122
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 4.4A DPAK-2 CoolMOS C6 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 4.4 A | 860 mOhms | 2.5 V | 13 nC | Enhancement | CoolMOS | ||||
|
55
In-stock
|
IR / Infineon | MOSFET MOSFT 30V 40A 4.3mOhm 1.1Ohm RG | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 20 A | 5.7 mOhms | 1.8 V | 13 nC | Enhancement |