- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
863
In-stock
|
IR / Infineon | MOSFET 75V Single N-Channel HEXFET Power | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 183 A | 3.5 mOhms | 3.7 V | 270 nC | Enhancement | StrongIRFET | |||||
|
|
VIEW | Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | ||||
|
|
580
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 120 A | 2.4 mOhms | 4 V | 270 nC | Enhancement | OptiMOS | |||
|
|
27,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 180A D2PAK-6 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 180 A | 1.3 mOhms | 2 V | 270 nC | Enhancement | OptiMOS |
