- Package / Case :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,525
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 2.9 Ohms | - 2.9 V | 2.8 nC | Depletion | ||||
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5,556
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 2.9 Ohms | - 2.9 V | 2.8 nC | Depletion | ||||
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1,743
In-stock
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Infineon Technologies | MOSFET N-Ch 100V 90mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 170 mA | 2.9 Ohms | - 2.9 V | 2.8 nC | Depletion | ||||
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4,610
In-stock
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Texas instruments | MOSFET Sync Buck NexFET Power Block II | 20 V | SMD/SMT | PTAB-5 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V, 30 V | 25 A | 10.4 mOhms, 3.5 mOhms | 1.1 V to 1.9 V | 2.8 nC | NexFET | ||||
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3,164
In-stock
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Texas instruments | MOSFET 30V,NCh Nex FET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 15.5 mOhms | 1.6 V | 2.8 nC | NexFET | ||||
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2,476
In-stock
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Texas instruments | MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 11.8 mOhms | 1.6 V | 2.8 nC | NexFET | ||||
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9,983
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS | 20 V | SMD/SMT | X1-DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 410 mA | 1.4 Ohms | 1.3 V | 2.8 nC | Enhancement |
