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- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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12,777
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 13A 10mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 13 A | 10.5 mOhms | 1.8 V | 9.5 nC | |||||
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10,376
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | ||||||||
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10,175
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl | 20 V | SMD/SMT | SOT-23-3 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3 A | 165 mOhms | 9.5 nC | ||||||||
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3,578
In-stock
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onsemi | MOSFET T6 60V NCH LL IN U8FL | 20 V | SMD/SMT | WDFN-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13.3 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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1,586
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 13 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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1,579
In-stock
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IR / Infineon | MOSFET MOSFT 30V 8.3A 25mOhm 9.5nC | 20 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 8.3 A | 25 mOhms | 9.5 nC | ||||||||
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1,315
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.7 mOhms | 1.2 V | 9.5 nC | Enhancement | ||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 60V P-Ch 60Vds 20Vgs FET 1030pF 19.4nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 4.5 A | 98 mOhms | - 3 V | 9.5 nC | Enhancement | ||||
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5,000
In-stock
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onsemi | MOSFET TRENCH 6 60V NFET | 20 V | SMD/SMT | SO-FL-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.7 mOhms | 1.2 V | 9.5 nC | Enhancement |