- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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7,833
In-stock
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Infineon Technologies | MOSFET MOSFT 75V 170A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 170 A | 4.5 mOhms | 180 nC | |||||||||
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627
In-stock
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IR / Infineon | MOSFET MOSFT 75V 180A 4.5mOhm 180nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 75 V | 180 A | 3.6 mOhms | 180 nC | |||||||||
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8,625
In-stock
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IR / Infineon | MOSFET MOSFET, 135V, 145A 8.4 mOhm, 180 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 135 V | 129 A | 8.4 mOhms | 2 V | 180 nC | Enhancement | StrongIRFET | |||
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374
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | ||||||
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1,021
In-stock
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Infineon Technologies | MOSFET 1 P-CH -55V HEXFET 20mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 74 A | 20 mOhms | - 2 V to - 4 V | 180 nC | Enhancement | |||||
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668
In-stock
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IR / Infineon | MOSFET 75V Single N-Channel HEXFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 197 A | 3.05 mOhms | 3.7 V | 180 nC | Enhancement | StrongIRFET | ||||
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405
In-stock
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Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 40 A | 60 mOhms | - 4 V | 180 nC | Enhancement | |||||
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66
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 34 A | 125 mOhms | 3 V | 180 nC | Enhancement | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 100V 2.1mOhm 180A STripFET VI | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 3.8 V | 180 nC | STripFET | |||||
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 3.5 V | 180 nC | ||||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 2.5 V | 180 nC | Enhancement | STripFET | ||||
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1,740
In-stock
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IR / Infineon | MOSFET 24V 1 N-CH HEXFET 1mOhm 180nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 Ohms | 4 V | 180 nC | Enhancement |