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21 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,370
In-stock
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Fairchild Semiconductor | MOSFET 30V N-Ch Power Trench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 15 A | 5.7 mOhms | 41 nC | Enhancement | |||||
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4,898
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | ||||
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2,941
In-stock
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Fairchild Semiconductor | MOSFET 40V 65A N-Chnl Power Trench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 5.6 mOhms | 2 V | 41 nC | Enhancement | PowerTrench | |||
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GET PRICE |
27,700
In-stock
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Infineon Technologies | MOSFET LOW POWER_LEGACY | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 780 mOhms | 2.1 V | 41 nC | Enhancement | CoolMOS | ||
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GET PRICE |
10,350
In-stock
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Infineon Technologies | MOSFET N-Ch 150V 83A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 83 A | 10.8 mOhms | 41 nC | Enhancement | OptiMOS | |||
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3,942
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 100A TDSON-8 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 100 A | 1.7 mOhms | 1 V | 41 nC | Enhancement | ||||
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4,973
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.8 mOhms | 2.1 V | 41 nC | Enhancement | OptiMOS | |||
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1,342
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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41,120
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 120 A | 4.6 mOhms | 1.8 V | 41 nC | |||||
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1,000
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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1,828
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI | |||
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1,030
In-stock
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Infineon Technologies | MOSFET N-CHANNEL_55/60V | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 30 A | 11.3 mOhms | 3 V | 41 nC | Enhancement | ||||
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424
In-stock
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Fairchild Semiconductor | MOSFET SINGLE PT8 N 30/20 SYNCFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 30 V | 26 A | 2 mOhms | 1.7 V | 41 nC | Enhancement | PowerTrench SyncFET | ||||
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333
In-stock
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Toshiba | MOSFET N-Ch 30V 2970pF 41nC 33A 30W | 20 V | SMD/SMT | TSON-Advance-8 | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 188 A | 1.2 mOhms | 1.1 V | 41 nC | Enhancement | |||||
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7,422
In-stock
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Texas instruments | MOSFET 60V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 3.3 mOhms | 1.5 V | 41 nC | Enhancement | NexFET | |||
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2,793
In-stock
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Texas instruments | MOSFET 60V,NCh NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 100 A | 2.6 mOhms | 1.9 V | 41 nC | NextFET | ||||
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690
In-stock
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Toshiba | MOSFET 40 Volt N-Channel | 20 V | SMD/SMT | TSON-Advance-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 4 mOhms | 1.4 V | 41 nC | Enhancement | ||||
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10,000
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 40A TDSON-8 OptiMOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 40 A | 2.1 mOhms | 2.2 V | 41 nC | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 CoolMOS CFD2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 650V 11.4A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.4 A | 280 mOhms | 3.5 V | 41 nC | Enhancement | CoolMOS | |||
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VIEW | Diodes Incorporated | MOSFET 30V N-Ch Enh FET 4.6mOhm 10Vgs 17.6A | 20 V | SMD/SMT | PowerDI3333-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 17.6 A | 4.6 mOhms | 2.3 V | 41 nC | Enhancement | PowerDI |
