MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IRFH9310TRPBF	1+ $1.600 10+ $1.360 100+ $1.040 500+ $0.927 4000+ $0.634		PDF RFQ	3,436 In-stock	IR / Infineon	MOSFET 1 P-CH -30V HEXFET 7.7mOhms 11nC	20 V	SMD/SMT	PQFN-8			Reel	1 Channel	Si	P-Channel	- 30 V	- 21 A	4.6 mOhms		165 nC
	IPB029N06N3 G	1+ $1.700 10+ $1.440 100+ $1.160 500+ $1.010 1000+ $0.836		PDF RFQ	1,867 In-stock	Infineon Technologies	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	120 A	2.3 mOhms	2 V	165 nC	Enhancement	OptiMOS
	IPB029N06N3GATMA1	1+ $1.700 10+ $1.440 100+ $1.160 500+ $1.010 1000+ $0.836		PDF RFQ	1,000 In-stock	Infineon Technologies	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3	20 V	SMD/SMT	TO-263-3	- 55 C	+ 175 C	Reel	1 Channel	Si	N-Channel	60 V	120 A	2.3 mOhms	2 V	165 nC	Enhancement	OptiMOS

IRFH9310TRPBF

IRFH9310TRPBF

IR / Infineon

MOSFET 1 P-CH -30V HEXFET 7.7mOhms 11nC

Stock : 3,436

1+: $1.600

10+: $1.360

100+: $1.040

500+: $0.927

4000+: $0.634

IPB029N06N3 G

IPB029N06N3 G

Infineon Technologies

MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3

Stock : 1,867

1+: $1.700

10+: $1.440

100+: $1.160

500+: $1.010

1000+: $0.836

IPB029N06N3GATMA1

IPB029N06N3GATMA1

Infineon Technologies

MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3

Stock : 1,000

1+: $1.700

10+: $1.440

100+: $1.160

500+: $1.010

1000+: $0.836

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