- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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8,488
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 1.2 Ohms | 500 mV | 500 pC | Enhancement | |||
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1,340
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 340 mA | 1.2 Ohms | 500 mV | 500 pC | Enhancement | |||
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9,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 380 mA | 1.2 Ohms | 500 mV | 500 pC | Enhancement | |||
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12,000
In-stock
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Diodes Incorporated | MOSFET N-Ch Enh Mode FET 60Vdss 20Vgss | 20 V | SMD/SMT | X1-DFN1212-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 2 Ohms | 1 V | 500 pC | Enhancement |
