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- Maximum Operating Temperature :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,825
In-stock
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STMicroelectronics | MOSFET P-Ch 60V 0.13 Ohm 3A STripFET VI | 20 V | SMD/SMT | SOIC-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 130 mOhms | 2 V | 6.4 nC | Enhancement | STripFET | |||
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27,063
In-stock
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STMicroelectronics | MOSFET N-Ch 200V 0.10Ohm 18 A StripFET FET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 18 A | 100 mOhms | 3 V | 28 nC | Enhancement | STripFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 100V 2.1mOhm 180A STripFET VI | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.5 mOhms | 3.8 V | 180 nC | STripFET | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 100 V 2.1 mOhm 180 A STripFET | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 180 A | 2.3 mOhms | 2.5 V | 180 nC | Enhancement | STripFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power M... | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 80 A | 5 mOhms | 2 V | 42 nC | Enhancement | STripFET | |||
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1,000
In-stock
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STMicroelectronics | MOSFET N-Ch 40 V 1.4 mOhm 180 A STripFET III | 20 V | SMD/SMT | H2PAK-2 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.4 mOhms | 2 V | 110 nC | Enhancement | STripFET |
