- Maximum Operating Temperature :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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13,871
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+N-CH | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7.1 A | 25 mOhms | 1.2 V | 4.4 nC | Enhancement | |||
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5,279
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 2.3 A | 400 mOhms | 7.2 nC | |||||||
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1,008
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -40V -3.4A 112mOhm 25nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 40 V | - 3.4 A | 190 mOhms | 25 nC | |||||||
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1,815
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 4.5A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | |||
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1,306
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | N-Channel | 30 V | 3.2 A | 200 mOhms | 6.4 nC | |||||||
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4,768
In-stock
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IR / Infineon | MOSFET MOSFT PCh -20V -4A 86mOhm 8.3nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 86 mOhms | 8.3 nC | |||||||
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1,212
In-stock
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onsemi | MOSFET 30V 3.5A P-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.5 A | 100 mOhms | Enhancement | |||||
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1,345
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -30V -3.8A 98mOhm 11nC | 20 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.8 A | 165 mOhms | 11 nC | |||||||
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2,465
In-stock
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onsemi | MOSFET NFET TSOP6 30V 7A 0.030R | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 5 A | 21.5 mOhms | 1 V | 12 nC | Enhancement | |||
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3,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 60Vds 20Vgs AEC-Q101 Qualified | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7 A | 0.032 Ohms | 1.5 V | 12 nC | Enhancement | |||
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14,995
In-stock
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onsemi | MOSFET -30V -4.7A P-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.7 A | 68 mOhms | Enhancement | |||||
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5,647
In-stock
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onsemi | MOSFET PFET TSOP6 60V 2.5A 110mOhm | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 2.5 A | 110 mOhms | Enhancement | |||||
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12,000
In-stock
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onsemi | MOSFET 30V 7A N-Channel | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 7 A | 30 mOhms | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET OptiMOS3 Sm-Signl 60V 60mOhm 1.5A | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 4.5 A | 49 mOhms | 1.3 V | 5.6 nC | Enhancement | |||
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1,250
In-stock
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Infineon Technologies | MOSFET N and P-Ch 30V 2.3A, -2A TSOP-6 | 20 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 2.3 A, - 2 A | 88 mOhms, 67 mOhms | 1.6 V, - 1.5 V | - 5 nC, 1.5 nC | Enhancement |
