- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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167
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Toshiba | MOSFET MOSFET NCh 3.7ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 72 A | 3.7 mOhms | 2 V to 4 V | 81 nC | Enhancement | |||
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39
In-stock
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Toshiba | MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 100 A | 2.6 mOhms | 2 V to 4 V | 130 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET NCh 10ohm VGS10V10uAVDS80V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 35 A | 10 mOhms | 2 V to 4 V | 25 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET MOSFET NCh7.8ohm VGS10V10uAVDS120V | 20 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 120 V | 42 A | 7.8 mOhms | 2 V to 4 V | 52 nC | Enhancement |
