- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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5,201
In-stock
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Nexperia | MOSFET N-CH DMOS 200V 0.4A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 400 mA | 1.6 Ohms | Enhancement | ||||||
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25,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||||
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25,000
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||||
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1,505
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 260mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 3.9 Ohms | 800 mV | 5.5 nC | Enhancement | ||||
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970
In-stock
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IXYS Integrated Circuits | MOSFET N-Channel Depletion Mode FET | 20 V | SMD/SMT | SOT-89-3 | - 40 C | + 110 C | Reel | 1 Channel | Si | N-Channel | 350 V | 5 mA | 8 Ohms | Depletion | ||||||
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2,230
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 96pF 4nC | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 300 V | 210 mA | 6 Ohms | 3 V | 4 nC | Enhancement | PowerDI | |||
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9,000
In-stock
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Diodes Incorporated | MOSFET 100V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 1.4 A | 900 mOhms | Enhancement | ||||||
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229
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 250 mOhms | 1 V | 3.2 nC | Enhancement | ||||||
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622
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 3 A | 266 mOhms | 4 V | 120 nC | Enhancement | ||||
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448
In-stock
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Infineon Technologies | MOSFET N-Ch 240V 260mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 240 V | 260 mA | 3.9 Ohms | 800 mV | 5.5 nC | Enhancement | ||||
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21,870
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch ENH Mode 120mOhm 10VGS 3.3A | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 3.3 A | 120 mOhms | 1 V | 5 nC | Enhancement | ||||
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4,000
In-stock
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Diodes Incorporated | MOSFET 60V N-Chnl UMOS | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 3.6 A | 180 mOhms | Enhancement | ||||||
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VIEW | Nexperia | MOSFET TAPE13 PWR-MOS | 20 V | SMD/SMT | SOT-89-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 240 V | - 200 mA | 12 Ohms | Enhancement |
