- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,740
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V, 30 V | 3.4 A, 2.8 A | 100 mOhms, 140 mOhms | 9 nC | Enhancement | ||||||
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5,891
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6 A | 30 mOhms | 1.5 V | 11.4 nC | Enhancement | |||||
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2,483
In-stock
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Diodes Incorporated | MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 5 A | 44 mOhms | 3 V | 22.4 nC | Enhancement | |||||
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5,423
In-stock
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Diodes Incorporated | MOSFET 30V N-Ch Enh Mode 20Vgss 1.2W 643pF | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 6.6 A | 22 mOhms | 1.5 V | 12.5 nC | Enhancement | |||||
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2,765
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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3,745
In-stock
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Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 2.6 A | 115 mOhms | 1 V | 9.7 nC | Enhancement | |||||
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5,240
In-stock
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Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.9 A | 52 mOhms | - 1.7 V | 12.3 nC | Enhancement | |||||
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1,238
In-stock
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Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60 1V-60V TSOT26 T&R 3K | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 45 V | 4.8 A | 46 mOhms | 1.2 V | 22.4 nC | Enhancement | |||||
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VIEW | Diodes Incorporated | MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC | 20 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 4.9 A | 52 mOhms | - 1.7 V | 12.3 nC | Enhancement | PowerDI |