- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Id - Continuous Drain Current :
-
- - 20 A (1)
- 1.7 A (1)
- 10 A (1)
- 10.1 A (1)
- 10.3 A (1)
- 100 A (1)
- 11 A (3)
- 11.4 A (3)
- 12 A (3)
- 15 A (2)
- 16 A (1)
- 160 A (2)
- 163 A (1)
- 17 A (1)
- 17.5 A (3)
- 170 A (3)
- 180 A (7)
- 19 A (3)
- 19.2 A (2)
- 192 A (1)
- 2.4 A (1)
- 2.6 A (1)
- 20.2 A (1)
- 21 A (2)
- 21.3 A (2)
- 22.4 A (2)
- 27 A (1)
- 28 A (2)
- 3.1 A (2)
- 3.7 A (1)
- 31 A (3)
- 31.2 A (3)
- 35 A (2)
- 36 A (1)
- 39 A (1)
- 4.2 A (1)
- 4.3 A (1)
- 4.6 A (1)
- 45 A (2)
- 5 A (2)
- 5 mA (3)
- 5.3 A (1)
- 5.4 A (1)
- 5.6 A (1)
- 5.7 A (1)
- 55 A (1)
- 6 A (4)
- 6.1 A (1)
- 6.2 A (1)
- 6.6 A (1)
- 6.8 A (2)
- 60 A (2)
- 67 A (1)
- 7 A (2)
- 75 A (2)
- 8.3 A (1)
- 86 A (1)
- 9.1 A (1)
- 9.9 A (1)
- 90 A (3)
- Rds On - Drain-Source Resistance :
-
- 1 MOhms (2)
- 1 Ohms (1)
- 1.2 mOhms (3)
- 1.3 mOhms (1)
- 1.5 mOhms (1)
- 1.5 Ohms (1)
- 1.52 Ohms (1)
- 1.7 mOhms (1)
- 1.87 Ohms (1)
- 1.9 mOhms (1)
- 10.3 mOhms (1)
- 115 mOhms (2)
- 12 mOhms (1)
- 13 mOhms (1)
- 13.1 mOhms (2)
- 14 Ohms (1)
- 149 mOhms (2)
- 162 mOhms (2)
- 17.5 mOhms (1)
- 170 mOhms (1)
- 171 mOhms (3)
- 173 mOhms (2)
- 18 mOhms (1)
- 189 mOhms (2)
- 190 mOhms (1)
- 2.1 mOhms (1)
- 2.22 Ohms (1)
- 2.34 Ohms (1)
- 2.4 mOhms (1)
- 2.5 mOhms (2)
- 2.8 mOhms (1)
- 230 mOhms (1)
- 270 mOhms (3)
- 28 mOhms (1)
- 280 mOhms (3)
- 29 mOhms (1)
- 3.2 mOhms (2)
- 3.28 Ohms (1)
- 3.51 Ohms (3)
- 3.6 mOhms (1)
- 3.7 mOhms (2)
- 4.68 Ohms (1)
- 4.8 mOhms (1)
- 4.91 Ohms (1)
- 460 mOhms (1)
- 5 mOhms (1)
- 5.3 mOhms (1)
- 5.5 mOhms (1)
- 51 mOhms (1)
- 53 mOhms (1)
- 540 mOhms (2)
- 590 uOhms (1)
- 594 mOhms (6)
- 6.5 mOhms (1)
- 6.7 mOhms (1)
- 600 uOhms (3)
- 62 mOhms (2)
- 7.02 Ohms (1)
- 7.6 mOhms (1)
- 7.96 Ohms (1)
- 8 Ohms (2)
- 800 mOhms (1)
- 85 mOhms (1)
- 860 mOhms (1)
- 88 mOhms (2)
- 9 mOhms (1)
- 9.7 mOhms (1)
- 90 mOhms (3)
- 99 mOhms (3)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 10.5 nC (3)
- 108 nC (1)
- 11 nC (1)
- 118 nC (3)
- 12 nC (1)
- 12.4 nC (1)
- 13 nC (3)
- 14 nC (1)
- 15 nC (1)
- 155 nC (1)
- 17.2 nC (1)
- 192 nC (1)
- 196 nC (2)
- 20 nC (5)
- 20.5 nC (1)
- 22 nC (2)
- 23 nC (7)
- 24 nC (1)
- 25 nC (1)
- 26 nC (1)
- 27 nC (2)
- 28 nC (2)
- 29 nC (3)
- 31 nC (1)
- 34 nC (1)
- 343 nC (3)
- 35 nC (7)
- 36 nC (3)
- 37 nC (2)
- 39 nC (1)
- 4.3 nC (1)
- 4.6 nC (1)
- 40 nC (1)
- 41 nC (3)
- 44 nC (2)
- 45 nC (2)
- 51 nC (2)
- 6 nC (1)
- 6.7 nC (1)
- 60 nC (1)
- 62 nC (1)
- 64 nC (2)
- 68 nC (3)
- 73 nC (3)
- 8.2 nC (1)
- 8.7 nC (1)
- 80 nC (3)
- 82 nC (2)
- 85 nC (1)
- 86 nC (2)
- 9.4 nC (2)
- Channel Mode :
- Tradename :
104 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,340
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET 59.9mOhms 34nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 4.6 A | 51 mOhms | 34 nC | Enhancement | Directfet | |||||
|
7,069
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 34.5mOhms 39nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 6.2 A | 29 mOhms | 4 V | 39 nC | Enhancement | Directfet | ||||
|
6,827
In-stock
|
IR / Infineon | MOSFET 30V 1 N-CH HEXFET DIRECTFET MX | 20 V | SMD/SMT | DirectFET-MT | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 A | 1.7 mOhms | 1.7 V | 51 nC | ||||||
|
3,591
In-stock
|
IR / Infineon | MOSFET 60V 1 N-CH 5.5mOhm DirectFET 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 86 A | 5.5 mOhms | 36 nC | Enhancement | Directfet | |||||
|
4,205
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH 10.3mOhm DirectFET 20V 3.7Vgs | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 10.3 A | 10.3 mOhms | 4.8 V | 35 nC | Enhancement | Directfet | ||||
|
1,304
In-stock
|
Infineon Technologies | MOSFET HIGH POWER BEST IN CLASS | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 28 A | 62 mOhms | 3 V | 64 nC | Enhancement | CoolMOS | ||||
|
5,580
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET DIRECTFET SJ | 20 V | SMD/SMT | DirectFET-SJ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 5.7 A | 28 mOhms | 14 nC | Enhancement | Directfet | |||||
|
800
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 31A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||||
|
569
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 31A D2PAK-2 CoolMOS CP | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 31 A | 90 mOhms | 2.5 V | 80 nC | Enhancement | CoolMOS | ||||
|
3,890
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | ||||
|
10,630
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 99.6A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 31.2 A | 99 mOhms | 3.5 V | 118 nC | Enhancement | CoolMOS | ||||
|
2,469
In-stock
|
Infineon Technologies | MOSFET 80V 1 N-CH HEXFET 15mOhms 22nC | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 55 A | 12 mOhms | 4 V | 22 nC | Enhancement | Directfet | ||||
|
5,056
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 600 uOhms | 1.2 V | 343 nC | Enhancement | |||||
|
5,686
In-stock
|
IR / Infineon | MOSFET 30V 1 P-CH HEXFET 105mOhms 31nC | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 55 V | - 20 A | 170 mOhms | - 1 V | 31 nC | Enhancement | |||||
|
3,635
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 230 mOhms | 3 V to 4 V | 20 nC | Enhancement | CoolMOS | ||||
|
2,885
In-stock
|
IR / Infineon | MOSFET 80V 1 N-CH HEXFET 9.5mOhms 36nC | 20 V | SMD/SMT | DirectFET-MN | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 12 A | 7.6 mOhms | 36 nC | Enhancement | Directfet | |||||
|
5,886
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.2 mOhms | 1.2 V | 196 nC | Enhancement | OptiMOS | ||||
|
940
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 57.2A D2PAK-2 | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 17.5 A | 171 mOhms | 3.5 V | 68 nC | Enhancement | CoolMOS | ||||
|
4,566
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET SH | 20 V | SMD/SMT | DirectFET-SH | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 4.2 A | 53 mOhms | 8.7 nC | Enhancement | ||||||
|
473
In-stock
|
Infineon Technologies | MOSFET N-Ch 49V 36A D2PAK-6 | 20 V | SMD/SMT | TO-263-7 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 49 V | 36 A | 6.5 mOhms | 1.6 V | 155 nC | Enhancement | |||||
|
3,426
In-stock
|
Infineon Technologies | MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 45 A | 13.1 mOhms | 2 V | 35 nC | Enhancement | OptiMOS | ||||
|
4,710
In-stock
|
Infineon Technologies | MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 163 A | 1.3 mOhms | 1.2 V to 2 V | 62 nC | Enhancement | OptiMOS | ||||
|
2,415
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 6A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6 A | 594 mOhms | 3.5 V | 20 nC | Enhancement | CoolMOS | ||||
|
1,909
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 15A VSON-4 | 20 V | SMD/SMT | VSON-4 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 15 A | 115 mOhms | 3 V | 35 nC | Enhancement | CoolMOS | ||||
|
4,800
In-stock
|
Infineon Technologies | MOSFET 100V 1 N-CH HEXFET DIRECTFET MZ | 20 V | SMD/SMT | DirectFET-MZ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 8.3 A | 17.5 mOhms | 22 nC | Enhancement | Directfet | |||||
|
992
In-stock
|
Infineon Technologies | MOSFET N-Ch 55V 19A D2PAK-4 | 20 V | SMD/SMT | TO-263-5 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 19 A | 18 mOhms | 1.6 V | 60 nC | Enhancement | |||||
|
2,768
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 2.1 mOhms | 1.9 V | 40 nC | Directfet | |||||
|
4,027
In-stock
|
IXYS Integrated Circuits | MOSFET N Ch Dep Mode FET 350V | 20 V | SMD/SMT | SOT-223-3 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 350 V | 5 mA | 14 Ohms | Depletion | Clare | ||||||
|
556
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | ||||||
|
980
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CPA | 20 V | SMD/SMT | TO-263-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 270 mOhms | 2.5 V | 29 nC | Enhancement | CoolMOS |