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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXTA3N120
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3,499
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IXYS MOSFET 3 Amps 1200V 4.5 Rds 20 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 3 A 4.5 Ohms Enhancement  
IXTP3N120
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269
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IXYS MOSFET MOSFET Id3 BVdass1200 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 3 A 4.5 Ohms Enhancement  
IXFB40N110P
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27
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IXYS MOSFET 40 Amps 1100V 0.2600 Rds 30 V Through Hole PLUS-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 40 A 260 mOhms Enhancement HyperFET
MMIX1F40N110P
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IXYS MOSFET SMPD MOSFETs Power Device   SMD/SMT SMPD-24     Tube   Si N-Channel 1100 V 24 A 290 mOhms    
IXFL40N110P
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IXYS MOSFET 40 Amps 1100V 0.2800 Rds 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 21 A 280 mOhms Enhancement HyperFET
IXTH13N110
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IXYS MOSFET 13 Amps 1100V 0.92 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 13 A 800 mOhms Enhancement  
IXTA3N110
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IXYS MOSFET 3 Amps 1100V 4 Rds 20 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 3 A 4 Ohms Enhancement  
IXTP3N110
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IXYS MOSFET 3 Amps 1100V 4 Rds 20 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1100 V 3 A 4 Ohms Enhancement  
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