1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | |
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VIEW | Toshiba | MOSFET N-CH FET 3.7nC 100uA 200V VDSS 5.5A | SOP-Advance-8 | Reel | 1 Channel | Si | N-Channel | 200 V | 5.5 A | 450 mOhms | 3.7 nC |
