- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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VIEW | IR / Infineon | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET X35PBF Power MOSFET Trans VGS10VVDS200V | 20 V | SMD/SMT | SOP-Advance-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 13 A | 54 mOhms | 2 V to 4 V | 11.2 nC | Enhancement |
