- Vgs - Gate-Source Voltage :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Pd - Power Dissipation | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Package | Factory Pack Quantity | RoHS | |
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GET PRICE |
4,520
In-stock
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Wolfspeed | MOSFET ZFET 1X20A IDS 1200V ON 80MOHM SIC MOSFT | - 5 V, + 20 V | Tube | 1 Channel | 208 W | N-Channel | 1.2 kV | 31.6 A | 98 mOhms | 4 V | 71 nC | TO-247 | 30 | Green available | |||||||||
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GET PRICE |
1,934
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||||||
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GET PRICE |
404
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 20 A | 215 mOhms | 2 V | 45 nC | Enhancement | |||||||
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GET PRICE |
290
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.58 Ohm typ., 12 A Zener-protected MDmesh... | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||||||
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GET PRICE |
593
In-stock
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STMicroelectronics | MOSFET N-channel 1200 V, 0.62 Ohm typ., 12 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | ||||||||
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GET PRICE |
408
In-stock
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Wolfspeed / Cree | MOSFET SIC MOSFET 1200V 75 mOhm | - 4 V, + 15 V | Through Hole | TO-247-4 | - 55 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 30 A | 75 mOhms | 1.7 V | 51 nC | Enhancement | |||||||
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GET PRICE |
17
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Through Hole | TO-39-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 22 A | 570 mOhms | 3 V | 290 nC | Enhancement | ||||||||
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GET PRICE |
12
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 8 A | 1.5 Ohms | 3 V | 80 nC | Enhancement | ||||||||
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GET PRICE |
590
In-stock
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STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ.... | - 10 V to + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 65 A | 52 mOhms | 1.8 V | 122 nC | Enhancement | |||||||
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GET PRICE |
1,200
In-stock
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STMicroelectronics | MOSFET 1200V silicon carbide MOSFET | - 10 V, + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 45 A | 80 mOhms | 2.6 V | 105 nC | ||||||||
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GET PRICE |
1,900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||||
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GET PRICE |
90
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Chassis Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 68 A | 25 mOhms | 2 V | 161 nC | Enhancement | |||||||
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GET PRICE |
288
In-stock
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STMicroelectronics | MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ... | - 10 V to + 25 V | Through Hole | HiP247-3 | - 55 C | + 200 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 12 A | 500 mOhms | 1.8 V | 22 nC | Enhancement | |||||||
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GET PRICE |
40
In-stock
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IXYS | MOSFET SiC Power MOSFET | - 5 V to + 20 V | Screw Mount | SOT-227-4 | - 40 C | + 150 C | Tube | 1 Channel | SiC | N-Channel | 1.2 kV | 48 A | 40 mOhms | 2.4 V | 115 nC | Enhancement |