- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
863
In-stock
|
IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
|
127
In-stock
|
IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 185 nC | Enhancement | |||||
|
60
In-stock
|
IXYS | MOSFET -120 Amps -65V 0.01 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 120 A | 10 mOhms | 58 nC | ||||||
|
82
In-stock
|
IXYS | MOSFET 28 Amps 65V 0.045 Rds | 15 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 28 A | 45 mOhms | - 2.5 V | 46 nC | Enhancement | ||||
|
100
In-stock
|
IXYS | MOSFET 28 Amps 65V 0.045 Rds | 15 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 65 V | - 28 A | 45 mOhms |