- Vgs - Gate-Source Voltage :
- Mounting Style :
- Id - Continuous Drain Current :
-
- - 0.27 A (2)
- - 1 A (2)
- - 1.6 A (1)
- - 11 A (1)
- - 13 A (2)
- - 140 mA (1)
- - 170 mA (1)
- - 2.3 A (1)
- - 2.4 A (1)
- - 230 mA (2)
- - 28 A (1)
- - 3.1 A (2)
- - 3.6 A (1)
- - 3.7 A (1)
- - 3.8 A (1)
- - 3.9 A (1)
- - 310 mA (1)
- - 360 mA (1)
- - 4.4 A (1)
- - 4.6 A (1)
- - 50 A (1)
- - 500 mA (1)
- - 6 A (1)
- - 6.5 A (1)
- - 6.6 A (2)
- - 680 mA (2)
- - 700 mA (2)
- - 75 mA (1)
- - 9 A (1)
- - 980 mA (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 1.05 Ohms (2)
- 1.3 Ohms (1)
- 1.4 Ohms (2)
- 1.45 Ohms (2)
- 12.5 Ohms (1)
- 190 mOhms (2)
- 2.2 Ohms (1)
- 20 Ohms (2)
- 205 mOhms (4)
- 210 mOhms (1)
- 22 mOhms (1)
- 235 mOhms (1)
- 240 mOhms (1)
- 300 mOhms (2)
- 350 mOhms (1)
- 4.2 Ohms (2)
- 450 mOhms (2)
- 480 mOhms (1)
- 530 mOhms (2)
- 57 mOhms (1)
- 67 mOhms (1)
- 8 Ohms (3)
- 900 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
38 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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16,362
In-stock
|
Diodes Incorporated | MOSFET P-Ch 100 Volt 5.2A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.8 A | 190 mOhms | - 4 V | 26.9 nC | Enhancement | ||||
|
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7,752
In-stock
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Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 140 mA | 20 Ohms | Enhancement | ||||||
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3,703
In-stock
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Diodes Incorporated | MOSFET 100V P-Chnl UMOS | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.7 A | 190 mOhms | Enhancement | ||||||
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6,934
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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4,363
In-stock
|
Fairchild Semiconductor | MOSFET -100V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1.05 Ohms | Enhancement | ||||||
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3,524
In-stock
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Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 75 mA | 20 Ohms | Enhancement | ||||||
|
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3,960
In-stock
|
Diodes Incorporated | MOSFET 100V P-Chanl UMOS | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1.6 A | 450 mOhms | Enhancement | ||||||
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3,378
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.6 A | 1.05 Ohms | Enhancement | ||||||
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3,238
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 530 mOhms | Enhancement | ||||||
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GET PRICE |
29,880
In-stock
|
Infineon Technologies | MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 13 A | 205 mOhms | - 4 V | 38.7 nC | Enhancement | |||
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254
In-stock
|
Fairchild Semiconductor | MOSFET PT5 100V/25V Pch Power Trench Mosfet | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.4 A | 67 mOhms | PowerTrench | |||||||
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4,369
In-stock
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Diodes Incorporated | MOSFET 100V P-CH MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 9 A | 240 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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3,587
In-stock
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Infineon Technologies | MOSFET P-Ch -100V 1A SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 1 A | 1 Ohms | - 2 V | 12.4 nC | Enhancement | ||||
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2,931
In-stock
|
Diodes Incorporated | MOSFET P-Chan 100V MOSFET (UMOS) | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 4.6 A | 235 mOhms | - 4 V | 16.5 nC | Enhancement | ||||
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1,986
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 310 mA | 8 Ohms | Enhancement | ||||||
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2,030
In-stock
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onsemi | MOSFET SWITCHING DEVICE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms | 21 nC | ||||||
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3,840
In-stock
|
onsemi | MOSFET PCH 80MA 100V SOT-23 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 170 mA | 12.5 Ohms | - 2.6 V | 900 pC | Enhancement | ||||
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1,713
In-stock
|
IR / Infineon | MOSFET AUTO -100V 1 P-CH HEXFET 205mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.1 A | 205 mOhms | Enhancement | ||||||
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2,462
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch MOSFET 20V VGS -11.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 3.9 A | 350 mOhms | Enhancement | ||||||
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3,261
In-stock
|
Diodes Incorporated | MOSFET P-Ch 100 Volt 0.7A | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 700 mA | 1.45 Ohms | Enhancement | ||||||
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1,228
In-stock
|
Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | +/- 20 V | SMD/SMT | SC-59-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 360 mA | 2.2 Ohms | - 2 V | 5.3 nC | Enhancement | ||||
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152,000
In-stock
|
Infineon Technologies | MOSFET 20V -100V P-CH FET 480mOhms 18nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.5 A | 480 mOhms | 18 nC | Enhancement | |||||
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1,339
In-stock
|
Diodes Incorporated | MOSFET P-Chnl 100V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 230 mA | 8 Ohms | Enhancement | ||||||
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1,196
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 530 mOhms | QFET | |||||||
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576
In-stock
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Diodes Incorporated | MOSFET 100V P-Ch Enh FET 20Vgs -0.5A ID 625mW | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 500 mA | 1.45 Ohms | - 4 V | 1.8 nC | Enhancement | ||||
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875
In-stock
|
onsemi | MOSFET POWER MOSFET | 20 V | SMD/SMT | ATPAK-3 | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 28 A | 57 mOhms | ||||||||
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1,265
In-stock
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Infineon Technologies | MOSFET P-Ch -100V -680mA SOT-223-3 | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 680 mA | 1.4 Ohms | - 2 V | - 6.4 nC | Enhancement | ||||
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704
In-stock
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Infineon Technologies | MOSFET SIPMOS Sm-Signal 900mOhm -100V 980mA | +/- 20 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 980 mA | 900 mOhms | - 4 V | 1.1 nC | Enhancement | ||||
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1,343
In-stock
|
Diodes Incorporated | MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A | +/- 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 2.3 A | 300 mOhms | - 3 V | 17.5 nC | Enhancement | ||||
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1,930
In-stock
|
Diodes Incorporated | MOSFET P-Ch Enh Mode FET 100V 20Vgss 87pF | - 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 0.27 A | 4.2 Ohms | - 2.3 V | 1.8 nC | Enhancement |
