- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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70
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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GET PRICE |
62
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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GET PRICE |
131
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | ||
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GET PRICE |
24
In-stock
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IXYS | MOSFET -108.0 Amps -100V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 108 A | 13 mOhms | - 4 V | 240 nC | Enhancement | PolarP |
