- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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867
In-stock
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IXYS | MOSFET -90.0 Amps -100V 25 mOhms | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 90 A | 25 mOhms | |||||||
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653
In-stock
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Infineon Technologies | MOSFET MOSFT PCh -21A 117mOhm 64.7nCAC | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | P-Channel | - 100 V | - 21 A | 117 mOhms | 64.7 nC | ||||||||
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88
In-stock
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IXYS | MOSFET -50 Amps -100V 0.055 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 50 A | 55 mOhms | - 5 V | 140 nC | Enhancement | ||||
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58
In-stock
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IXYS | MOSFET -76 Amps -100V 0.024 Rds | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 76 A | 25 mOhms | - 4 V | 197 nC | Enhancement | TrenchP | ||||
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131
In-stock
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IXYS | MOSFET -52.0 Amps -100V 0.050 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 52 A | 50 mOhms | - 4 V | 60 nC | Enhancement | PolarP | |||
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24
In-stock
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IXYS | MOSFET -108.0 Amps -100V 0.013 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | P-Channel | - 100 V | - 108 A | 13 mOhms | - 4 V | 240 nC | Enhancement | PolarP | ||||
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30
In-stock
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IXYS | MOSFET TrenchP Channel Power MOSFETs | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 100 V | - 195 A | 8 mOhms | |||||||||||
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177
In-stock
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IXYS | MOSFET TrenchP Channel Power MOSFETs | 15 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 140 A | 10 mOhms | - 2 V to - 4 V | 400 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET -57.0 Amps -100V 0.270 Rds | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 100 V | - 57 A | 27 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET TrenchP Channel Power MOSFETs | Through Hole | TO-247-3 | Tube | Si | P-Channel | - 100 V | - 110 A | 11 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET -36 Amps -100V 0.075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 36 A | 75 mOhms | Enhancement | |||||||
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1,469
In-stock
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onsemi | MOSFET PCH 4V DRIVE SERIES | Through Hole | TO-247-3 | Bulk | 1 Channel | Si | P-Channel | - 100 V | - 11 A | 210 mOhms |