- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Number of Channels :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
1,660
In-stock
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Diodes Incorporated | MOSFET 100V Comp Enh FET 20Vgs w/ H-Bridge | +/- 20 V, +/- 20 V | SMD/SMT | V-DFN5045-12 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 2.9 A, - 2.3 A | 111 mOhms, 191 mOhms | 1 V, - 3 V | 9.7 nC, 17.5 nC | Enhancement | ||
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2,998
In-stock
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Siliconix / Vishay | MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified | +/- 20 V, +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 15 A, - 9.5 A | 36.5 mOhms, 118.4 mOhms | 1.5 V, - 2.5 V | 15 nC, 20 nC | Enhancement | ||
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GET PRICE |
91
In-stock
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Diodes Incorporated | MOSFET Mosfet H-Bridge 100/-100 1.1/-0.9 | +/- 20 V, +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 4 Channel | Si | N-Channel, P-Channel | 100 V, - 100 V | 1 A, - 850 mA | 700 mOhms, 1.45 Ohms | 2 V | 2.9 nC, 3.5 nC | Enhancement |
