- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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57,460
In-stock
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Fairchild Semiconductor | MOSFET 60V P-Channel QFET | 25 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 135 mOhms | Enhancement | |||||
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5,232
In-stock
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Fairchild Semiconductor | MOSFET -60V Single | 25 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 135 mOhms | Enhancement | |||||
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5,067
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement | |||||
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3,423
In-stock
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onsemi | MOSFET PFET DPAK 60V 12A 180MO | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | 15 nC | ||||||
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5,000
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 156 mOhms | Enhancement | |||||
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414
In-stock
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onsemi | MOSFET PCH -60V -12A TP-FA(DPAK) | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | |||
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928
In-stock
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onsemi | MOSFET PCH -60V -12A TP(IPAK) | +/- 20 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 47 mOhms | - 2.6 V | 26 nC | Enhancement | |||
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2,250
In-stock
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onsemi | MOSFET -60V -12A P-Channel | 20 V | Through Hole | IPAK | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 60 V | - 12 A | 155 mOhms | Enhancement |
