5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
47,027
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
23,299
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
15,516
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
6,844
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement | ||||
|
14,983
In-stock
|
Infineon Technologies | MOSFET P-Ch -60V -170mA SOT-23-3 | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 60 V | - 170 mA | 5.8 Ohms | - 2 V | 1.5 nC | Enhancement |